| PART |
Description |
Maker |
| 02-0274-0100 01-0109-0100 01-0109-01SD |
CAS-2000 Comprehensive Application System
|
JDS Uniphase Corporation
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5362205C2W KMM5362205C2WG |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5361203C2W |
1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
|
Samsung Semiconductor
|
| KMM5362205C2W |
2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
| KMM5364003BSW |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V 4米36的DRAM上海药物研究所使用4Mx16
|
Samsung Semiconductor Co., Ltd.
|
| KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM5364003CK KMM5364103CK |
(KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
| EM47FM0888SBA-15 EM47FM0888SBA--125A EM47FM0888SBA |
Double DATA RATE 3 low voltage SDRAM
Posted CAS by programmable additive latency
|
Eorex Corporation
|
| 2N1035 2N1037 2N1034 2N1036 |
JEDEC TO-5
|
New Jersey Semi-Conductor Products, Inc.
|
| OM5321DT OM5321RT OM5320RT OM5320ST OM5320DT OM532 |
400V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
400V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a D2 package
HERMETIC JEDEC TO-257AA HIGH EFFICIENCY, SOFT RECOVERY CENTER-TAP RECTIFIER
|
International Rectifier
ETC
List of Unclassifed Manufacturers
|
| 1N87 AAY32 1N695A AAY42 |
JEDEC DO-7 PACKAGE
|
Jedec
|
